1 / 9 n ??? n - channel mosfet j cs 7 n 8 0 h order codes ? marking ? package halogen free ? packaging device weight jcs 7 n 8 0c h - o - c - n - b jcs 7 n 8 0c h to - 220c no tube 2.15 g(typ) jcs 7 n 8 0f h - o - f - n - b jcs 7 n 8 0f h to - 220mf no tube 2.20 g(typ) ? pack age ? main characteristics i d 7 a v dss 8 00 v rdson vgs=10v 1. 6 ? ( max ) qg 39.2 nc ( typ.) ? ? ?? ? ? ? ? ? c rss ( ? 1 3 pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typical 1 3 pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capa bility ? rohs product ? order message applications ? s witched mo de power supplies y ? electronic ballast r
jcs 7 n 8 0 h 20 1 5 0 6 b 2 / 9 ?? absolute ratin gs (tc=25 ) * ?? *drain current limited by maximum junction temperature ? parameter symbol ? value unit ???? dss 8 00 v ? d t=25 t=100 ? ? 1 drain current - pulse dm 2 8 a ??? gss 30 v ? ? 2 single pulsed avalanche energy as 1 4 mj ? ? 1 avalanche current ar 7.0 a ?? ? 1 repetitive a valanche e nergy ar 30 mj ??? ? 3 peak diode recovery dv/dt ? d t c =25 - derate above 25 ??? j stg - 55 ?? l 300 r
jcs 7 n 8 0 h 20 1 5 0 6 b 3 / 9 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source voltage bv dss i d =250 a, v gs =0v 8 00 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0. 92 - v/ ???? zero gate voltage drain current i dss v ds = 8 00v,v gs =0v, t c =25 - - 5 a v ds = 64 0v, t c =125 - - 1 0 0 a ?? ga te - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 3 . 0 - 5 .0 v ?? s tatic drain - source on - resistance r ds(on) v gs =10v , i d = 3 . 5 a - 1.3 1. 6 ? forward transconductance g fs v ds = 5 0v, i d = 3 .5 a note 4 - 5 . 5 - s ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 1288 1700 pf ou tput capacitance c oss - 129 1 50 pf reverse transfer capacitance c rss - 1 1 1 4 pf r
jcs 7 n 8 0 h 20 1 5 0 6 b 4 / 9 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v dd = 40 0v,i d = 7 a,r g =25? note 4 5 - 40 8 0 ns ? turn - on rise time t r - 105 210 ns ?? turn - off delay time t d (off) - 55 11 0 ns ?? turn - off fall time t f - 65 13 0 ns ? total gate charge q g v ds = 640 v , i d = 7 a v gs =10v note 4 5 - 39 50 nc ?? gate - source charge q gs - 7.9 - nc ?? gate - drain charge q gd - 21 - nc ????? drain - source diode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 7 a maximum pulsed drain - source diode forward current i sm - - 2 8 a ? drain - source diode forward voltage v sd v gs =0v, i s = 7 a - - 1.4 v ?? reverse recovery time t rr v gs =0v, i s = 7 a di f /dt=100a/ s (note 4) - 640 - ns ? reverse recovery charge q rr - 6.0 - c ? parameter symbol max unit jcs 7 n 8 0 ch jcs 7 n 8 0 f h ??? thermal resistance, junction to case r th(j - c) 0.65 0.78 /w ? thermal resistance, junction to ambient r th(j - a) 41 41 /w ? ? 1 ? 2 l = 0.5 mh, i as = 7 a, v dd = 50 v, r g =25 ?, ? t j =25 3 i sd 5 a,di/dt 2 00a/ s,vddbv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 0.5 mh, i as = 7 a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 5 a,di/dt 2 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,du ty cycle2 5 essentially independent of operating temperature r
jcs 7 n 8 0 h 20 1 5 0 6 b 5 / 9 electrical characteristics (curves) on - region characteristics transfer characteristics on - resistance variation vs. drain current and gate voltage body diode forward voltage variation vs. source current and temperature capacitance characteristics gate charge characteristics r
jcs 7 n 8 0 h 20 1 5 0 6 b 6 / 9 electrical characteristics (curves) electrical characteristics (curves) breakdown voltage variation vs. temperature on - resistance variation vs. temperature maximum drain current vs. case temperature maximum safe operating area transient thermal response curve r
jcs 7 n 8 0 h 20 1 5 0 6 b 7 / 9 ? package mechanical data to - 2 20 c u nit mm r
jcs 7 n 8 0 h 20 1 5 0 6 b 8 / 9 ? package mechanical data to - 2 20 mf u nit mm r
jcs 7 n 8 0 h 20 1 5 0 6 b 9 / 9 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4 . ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check care fully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 - 3 0 9 8 /3 0 9 9 : 86 - 432 - 6 4671533 contact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 64675688 6 4678411 - 309 8/3099 fax: 86 - 432 - 6 4671533 r
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